Characterization of efficiency-limiting resistance losses in monolithically integrated Cu(In,Ga)Se2 solar modules
نویسندگان
چکیده
The cell-to-module efficiency gap in Cu(In,Ga)Se2 (CIGS) monolithically integrated solar modules is enhanced by contact resistance between the Al-doped ZnO (AZO) and Mo back contact layers, the P2 contact, which connects adjacent cells. The present work evaluated the P2 contact resistance, in addition to the TCO resistance, using an embedded transmission line structure in a commercial-grade module without using special sample fabrication methods. The AZO layers between cells were not scribed; instead, the CIGS/CdS/i-ZnO/AZO device was patterned in a long stripe to permit measurement of the Mo electrode pair resistance over current paths through two P2 contacts (Mo/AZO) and along the AZO layer. The intercept and slope of the resistance as a function of the electrode interval yielded the P2 contact resistance and the TCO resistance, respectively. Calibration of the parasitic resistances is discussed as a method of improving the measurement accuracy. The contribution of the P2 contact resistance to the series resistance was comparable to that of the TCO resistance, and its origin was attributed to remnant MoSe2 phases in the P2 region, as verified by transmission electron microscopy.
منابع مشابه
Structural Characterization of the Cu2(Se,Te)3-(Ga,In)2(Se,Te)3 Semiconducting Systems
Many contributions have been reported in the literature about the synthesis and characterization of chalcopyrite-related Inand Ga-rich ordered defect compounds of the ternary systems: Cu-In-Se, Cu-In-Te, Cu-Ga-Se and Cu-GaTe. Particular interest has been paid to the compounds that can be derived from the formula CuN-3InN+1Se2N, where N=4, 5, 6, 7, 8 and 9, because some of these materials have a...
متن کاملFabrication Of Cu(In,Ga)Se2 Solar Cells With In2S3 Buffer Layer By Two Stage Process
Cu(In,Ga)Se2 thin films (CIGS) on metallic substrate (titanium, molybdenum, aluminum, stainless steel) were prepared by a two-step selenization of Co-evaporated metallic precursors in Se-containing environment under N2 gas flow. Structural properties of prepared thin film were studied. To characterize the optical quality and intrinsic defect nature low-temperature photoluminescence, were perfor...
متن کاملDelft University of Technology Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer A 3-D optical study
A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless dielectric spacer between Mo and CIGS, whose optical properties were varied. We show that such a spacer wi...
متن کاملZnO/ZnS(O,OH)/Cu(In,Ga)Se2/Mo SOLAR CELL WITH 18.6% EFFICIENCY
We report on recent enhancements to device performance leading to a certified total-area energy conversion efficiency of 18.6% for Cu(In,Ga)Se2 solar cells that incorporate a ZnS(O,OH) buffer layer as an alternative to CdS. Along with information on device fabrication and layer properties, we provide a comparative device analysis between this type of solar cell and the slightly more efficient Z...
متن کاملOne-Step Electrodeposited Cu-In-Ga Thin Films and Cu(In,Ga)Se2 Absorber Synthesis for Solar Cells
Cu-In-Ga electrodeposition on Mo substrate is carried out in acidic aqueous media. Subsequent selenization leads to Cu(In,Ga)Se2 absorber for thin film solar cells. First, conditions to achieve onestep Cu-In-Ga electrodeposition are analysed. Then, Cu-In and CuGa systems are studied. Cu-In electrodeposition is realized under diffusion-control conditions. For Cu-Ga system, first Cu(II) diffusion...
متن کامل